Investigations of positron lifetimes in InP with a pulsed positron beam
Identifieur interne : 000111 ( Main/Exploration ); précédent : 000110; suivant : 000112Investigations of positron lifetimes in InP with a pulsed positron beam
Auteurs : RBID : ISTEX:339_1995_Article_BF01538197.pdfEnglish descriptors
Abstract
Indium Phosphide layers grown by gas source Molecular Beam Epitaxy, (MBE) have been studied by positron lifetime spectroscopy using the recently modified pulsed positron beam in Munich. The as-grown samples are known to be phosphorous rich and contain a high concentration of vacancy-type defects. On annealing, phosphorous precipitates are formed and the concentration of free volume defects increases. Positron lifetime spectroscopy has identified the grown in defects to be indium vacancies at a concentration around 1018cm−3. The dominant defects after annealing exhibit a positron lifetime characteristic of divacancies and are present at concentrations in excess of 5×1019cm−3.
DOI: 10.1007/BF01538197
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Störmer</name><affiliation wicri:level="1"><mods:affiliation>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg</wicri:regionArea><wicri:noRegion>85577, Neubiberg</wicri:noRegion><wicri:noRegion>Neubiberg</wicri:noRegion></affiliation></author><author><name>D. T. Britton</name><affiliation wicri:level="1"><mods:affiliation>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg</wicri:regionArea><wicri:noRegion>85577, Neubiberg</wicri:noRegion><wicri:noRegion>Neubiberg</wicri:noRegion></affiliation></author><author><name>W. Triftshäuser</name><affiliation wicri:level="1"><mods:affiliation>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg, Germany</mods:affiliation><country xml:lang="fr">Allemagne</country><wicri:regionArea>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg</wicri:regionArea><wicri:noRegion>85577, Neubiberg</wicri:noRegion><wicri:noRegion>Neubiberg</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="RBID">ISTEX:339_1995_Article_BF01538197.pdf</idno><date when="1995">1995</date><idno type="doi">10.1007/BF01538197</idno><idno type="wicri:Area/Main/Corpus">000868</idno><idno type="wicri:Area/Main/Curation">000868</idno><idno type="wicri:Area/Main/Exploration">000111</idno></publicationStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>61.70</term><term>68.55</term><term>78.70</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="eng">Indium Phosphide layers grown by gas source Molecular Beam Epitaxy, (MBE) have been studied by positron lifetime spectroscopy using the recently modified pulsed positron beam in Munich. The as-grown samples are known to be phosphorous rich and contain a high concentration of vacancy-type defects. On annealing, phosphorous precipitates are formed and the concentration of free volume defects increases. Positron lifetime spectroscopy has identified the grown in defects to be indium vacancies at a concentration around 1018cm−3. The dominant defects after annealing exhibit a positron lifetime characteristic of divacancies and are present at concentrations in excess of 5×1019cm−3.</div></front></TEI><mods xsi:schemaLocation="http://www.loc.gov/mods/v3 file:///applis/istex/home/loadistex/home/etc/xsd/mods.xsd" version="3.4" istexId="9736e7aa702e9322190d7c75e00219696846fe73"><titleInfo lang="eng"><title>Investigations of positron lifetimes in InP with a pulsed positron beam</title></titleInfo><name type="personal"><namePart type="given">P.</namePart><namePart type="family">Willutzki</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg, Germany</affiliation></name><name type="personal"><namePart type="given">J.</namePart><namePart type="family">Störmer</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg, Germany</affiliation></name><name type="personal"><namePart type="given">D. T.</namePart><namePart type="family">Britton</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg, Germany</affiliation></name><name type="personal"><namePart type="given">W.</namePart><namePart type="family">Triftshäuser</namePart><role><roleTerm type="text">author</roleTerm></role><affiliation>Institut für Nukleare Festkörperphysik, Universität der Bundeswehr München, D-85577, Neubiberg, Germany</affiliation></name><typeOfResource>text</typeOfResource><genre>Regular Papers</genre><genre>Original Paper</genre><originInfo><publisher>Springer-Verlag, Berlin/Heidelberg</publisher><dateCreated encoding="w3cdtf">1994-08-29</dateCreated><dateCaptured encoding="w3cdtf">1995-01-25</dateCaptured><dateValid encoding="w3cdtf">2005-04-06</dateValid><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><language><languageTerm type="code" authority="iso639-2b">eng</languageTerm></language><physicalDescription><internetMediaType>text/html</internetMediaType></physicalDescription><abstract lang="eng">Indium Phosphide layers grown by gas source Molecular Beam Epitaxy, (MBE) have been studied by positron lifetime spectroscopy using the recently modified pulsed positron beam in Munich. The as-grown samples are known to be phosphorous rich and contain a high concentration of vacancy-type defects. On annealing, phosphorous precipitates are formed and the concentration of free volume defects increases. Positron lifetime spectroscopy has identified the grown in defects to be indium vacancies at a concentration around 1018cm−3. The dominant defects after annealing exhibit a positron lifetime characteristic of divacancies and are present at concentrations in excess of 5×1019cm−3.</abstract><subject lang="eng"><genre>PACS</genre><topic>78.70</topic><topic>68.55</topic><topic>61.70</topic></subject><relatedItem type="series"><titleInfo type="abbreviated"><title>Appl. Phys. A</title></titleInfo><titleInfo><title>Applied Physics A</title><subTitle>Materials Science and Processing</subTitle><partNumber>Year: 1995</partNumber><partNumber>Volume: 61</partNumber><partNumber>Number: 3</partNumber></titleInfo><genre>Archive Journal</genre><originInfo><dateIssued encoding="w3cdtf">1995-09-01</dateIssued><copyrightDate encoding="w3cdtf">1995</copyrightDate></originInfo><subject usage="primary"><topic>Physics</topic><topic>Optical and Electronic Materials</topic><topic>Nanotechnology</topic><topic>Characterization and Evaluation Materials</topic><topic>Surfaces and Interfaces, Thin Films</topic><topic>Condensed Matter</topic><topic>Operating Procedures, Materials Treatment</topic></subject><identifier type="issn">0947-8396</identifier><identifier type="issn">Electronic: 1432-0630</identifier><identifier type="matrixNumber">339</identifier><identifier type="local">IssueArticleCount: 16</identifier><recordInfo><recordOrigin>Springer-Verlag, 1995</recordOrigin></recordInfo></relatedItem><identifier type="doi">10.1007/BF01538197</identifier><identifier type="matrixNumber">Art12</identifier><identifier type="local">BF01538197</identifier><accessCondition type="use and reproduction">MetadataGrant: OpenAccess</accessCondition><accessCondition type="use and reproduction">AbstractGrant: OpenAccess</accessCondition><accessCondition type="restriction on access">BodyPDFGrant: Restricted</accessCondition><accessCondition type="restriction on access">BodyHTMLGrant: Restricted</accessCondition><accessCondition type="restriction on access">BibliographyGrant: Restricted</accessCondition><accessCondition type="restriction on access">ESMGrant: Restricted</accessCondition><part><extent unit="pages"><start>321</start><end>324</end></extent></part><recordInfo><recordOrigin>Springer-Verlag, 1995</recordOrigin><recordIdentifier>339_1995_Article_BF01538197.pdf</recordIdentifier></recordInfo></mods></record>Pour manipuler ce document sous Unix (Dilib)
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